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General Description
The AL1201 stereo DAC is a high performance 24-bit digital to analog audio converter. Dynamic range is 107dB (Aweighted). The sensible pinout and easy user interface are unprecedented. The part contains an internal high quality phaselocked loop that eliminates the need for external high frequency clocks.
Features
24 bit conversion 107dB dynamic range (A-wt) .003% THD at full scale output linear phase analog outputs 128x over sampling, 5th order 1 bit - modulator 2nd order switched cap filter and 2nd order continuous-time filter on chip sample rate variable 24kHz-55kHz selectable deemphasis (15us/50s at Fs=44.1kHz) total power consumption 170mW (Fs=48kHz) internal PLL derives all necessary timing signals from external Fs clock serial input bit-rate, selectable 32/24 bits/frame full scale differential output = +/-4V ([OUT+]-[OUT-]) 5V operation
OUTLOUTL+ AGND REF+ REFVD DIN FORMAT
16
16 pin SOIC 150 mils wide
DS1201-0702 Alesis Semiconductor 12555 Jefferson Blvd., Suite 285 Los Angeles, CA 90066 Phone (310) 301-0780 Fax (310) 306-1551 www.alesis-semi.com
9
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G G G G G G G G G G G G G
OUTROUTR+ MID VA AGND DGND DEM WDCLK
1 8
Pin Description Pin # Name 1 OUTL2 OUTL+ 3 AGND REF+ 4 5 REFVD 6 7 DIN 8 FORMAT 9 WDCLK 10 DEM 11 DGND 12 AGND 13 14 15 16 VA MID OUTR+ OUTR-
Pin Type OUTPUT OUTPUT GND PWR GND PWR INPUT INPUT INPUT INPUT GND GND PWR OUTPUT OUTPUT OUTPUT
Description negative analog output, left channel positive analog output, left channel analog ground positive reference, 5V, connect .1 bypass cap to REFnegative reference, connect to GND digital supply, 5V, connect .1 bypass cap to GND serial data input format select, 0=32 bits/frame, 1=24bits/frame sample frequency wordclock deemphasis select, 0=no deem, 1=deem digital ground analog ground analog supply, 5V, input, connect .1 bypass cap to GND MID reference output, connect .1 cap to GND positive analog output, right channel negative analog output, right channel Dimensions (Typical) Inches Millimeters
16
9 8
C
B
1
A
7 nom
K 4 nom
A B C D E F G H J K L
.389" .154" .236" .100" .008" .025" .050" .017" .011" .170" .033"
9.88 3.91 5.99 2.50 0.20 0.64 1.27 0.42 0.27 4.32 0.83
D E G F H
J
L
Notes: Dimension "A" does not include mold flash, protrusions or gate burrs.
DS1201-0702
Alesis Semiconductor 12555 Jefferson Blvd., Suite 285 Los Angeles, CA 90066 Phone (310) 301-0780 Fax (310) 306-1551 www.alesis-semi.com
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Analog Characteristics
(Ta=25C, VA=VD=VREF=5V, Fs=48kHz, input=1kHz 24 bit data, measurement bandwidth=20Hz20kHz, unless otherwise specified)
Parameter Dynamic Range THD+N
Crosstalk Output voltage
Comments output=-60dBFS (A-wt) output= 0dBFS output=-20dBFS output=-60dBFS output= 0dBFS [OUT+]-[OUT-]1 Fullscale interchannel match differential dc offset common mode dc bias differential analog (IA) digital (ID) IREF2 REF+ held at 5V REF+ held at 5V
Min
Max. output current Output impedance Power supply current REF current Power consumption Gain Error PSRR
Typ 107 -90 -84 -44 -118 +/-4.0 .05 1 2.5 +/-0.4 3 28 6 190 170 70
Max
+/-.69
Units dB dB dB dB dB V dB mV V mA Ohm mA mA A mW % dB
Note 1: Output voltage scales linearly with reference potential ([REF+]-[REF-]) Note 2: REF current scales with Fs.
Combined Digital and Analog Filter Characteristics
(Ta=25C, VA=VD=VREF=5V, Fs48kHz)
Parameter Passband Stopband Group delay Deemphasis Filter
Comments +/-0.1dB BW1 Ripple Frequency1 Attenuation Fs=44.1kHz `pole' time constant `zero' time constant
Min 0 26.23k -70
Typ
Max 21.77K +/-.007
28.5 50 15
Units Hz dB Hz dB 1/Fs s s
Note 1: passband, stopband, and deemphasis frequencies scale with Fs.
DS1201-0702
Alesis Semiconductor 12555 Jefferson Blvd., Suite 285 Los Angeles, CA 90066 Phone (310) 301-0780 Fax (310) 306-1551 www.alesis-semi.com
-3-
Recommended Operating Conditions
(GNDA=GNDD=0V)
Parameter VA VD Ta Fs rl
Comments analog supply voltage digital supply voltage ambient temperature sample frequency differential load resistance
Min 4.5 4.5 0 24 12K
Typ 5.0 5.0 25 48
Max 5.5 5.5 70 55
Units V V C kHz Ohm
Electrical Characteristics - Digital Pins (Ta=25C) Parameter Comments INPUTS (WDCLK, DIN, DEM, FORMAT) Vih Logical "1" input voltage Voh Logical "0" input voltage Iin input leakage current Cin input capacitance
Min 0.55VD
Typ
Max
Units V V A pF
.1VD 1 5
DS1201-0702
Alesis Semiconductor 12555 Jefferson Blvd., Suite 285 Los Angeles, CA 90066 Phone (310) 301-0780 Fax (310) 306-1551 www.alesis-semi.com
-4-
System Description
Serial Interface and Timing
The AL1201 receives its 2's complement serial data in a standard MSB-first format. Two bit-rates are allowed for. The 32 bits/frame (FORMAT low) is suitable for use in systems where a 256Fs master clock is present. The 24 bits/frame (FORMAT high) is convenient when interfacing with systems where a 384Fs clock is present. The input sample period is defined between rising edges of wordclock (WDCLK) input. Nominally, this is a 50% duty-cycle clock at frequency Fs, but it can be a pulse with Ts/256 < pulse-width < Ts (255/256); Ts=1/Fs. Left channel data is presented to the AL1201 with rising edge of WDCLK, and right channel data is presented Ts/2 seconds later (when WDCLK falls if 50% duty cycle). The serial bits are clocked into the AL1201 input registers on the falling edge of an internally generated bit clock (rising edge aligned with rising edge of WDCLK) that runs at 64Fs when FORMAT is low (32 bits/frame), or 48Fs when FORMAT is high (24 bits/frame). The input data should be valid +/-100ns from the falling edge of this internally generated clock. See timing diagram next page.
Input Logic Levels
The AL1201 can properly receive input logical `1' voltages of .55VD. This means the AL1201 can interface directly with logic signals supplied from 3.3V systems. No special interface circuitry is required.
Internal Phase-Locked Loop (PLL)
The AL1201 contains an internal PLL that locks to the rising edge of WDCLK and produces all necessary high frequency clocks and timing signals to operate the device. This high quality PLL will reject any high-frequency jitter on the incoming wordclock (jitter rejection corner approx. 4kHz). The PLL allows a simplified user interface and eliminates the need of running high frequency clocks on PCB traces to the part. This reduces unwanted RF noise and coupling problems that can occur when these clocks are required as input pins for a device.
DS1201-0702
Alesis Semiconductor 12555 Jefferson Blvd., Suite 285 Los Angeles, CA 90066 Phone (310) 301-0780 Fax (310) 306-1551 www.alesis-semi.com
-5-
Serial Input Formats
Left Channel WDCLK (Fs, 50% duty cycle shown) DIN, 32 bits/frame DIN, 24 bits/frame
23 23 0 Don't Care 0 23 23 0 Don't Care 0
Right Channel
Timing Example
32 bits/frame
WDCLK (Fs, 50% duty cycle shown) 64Fs bitclk (internal) LEFT RIGHT
DIN
VALID
100ns100ns
Ts/128
VALID
100ns100ns
VALID
100ns100ns
Ts/128
VALID
100ns100ns
Ts/64
Ts/64
24 bits/frame
WDCLK (Fs, 50% duty cycle shown) 48Fs bitclk (internal)
LEFT
RIGHT
DIN
VALID
100ns100ns
Ts/96
VALID
100ns100ns
VALID
100ns100ns
Ts/96
VALID
100ns100ns
Ts/48
Ts/48
DS1201-0702
Alesis Semiconductor 12555 Jefferson Blvd., Suite 285 Los Angeles, CA 90066 Phone (310) 301-0780 Fax (310) 306-1551 www.alesis-semi.com
-6-
Differential Analog Outputs
The AL1201 outputs are self-biased to MID potential. Maximum differential output signal level is +/-4V. The outputs have been internally filtered to reduce out-of-band noise, and further filtering is suggested where this is considered critical. The differential-to-single-ended filter shown
8.2k 4Vpp MID 10 IN-
is a two-pole 48kHz lowpass filter whose frequency response is flat from dc to 20kHz +/-.03dB. Its group delay deviation from flat is 1.3s at 20kHz. High quality ceramic or film capacitors suggested.
390p
8.2k
1.8k
1000p 10 IN+ 8.2k 1.8k
8.2k 4Vpp MID GND
390p GND
Differential to Single-ended Converter and 2-pole 48kHz lowpass filter Reference and Mid
The differential potential between the REF+ and REF- pins (connected to VA and GND respectively) determines the amount of charge that is added to or removed from the switched-capacitor filter input for each - modulator output (128Fs). It is very important that REF+ is well bypassed to REF- (.1F ceramic as close as possible to pins) to remove the unwanted effects of high frequency noise. The MID potential is developed on chip (VA/2 volts) and is used to bias the internal amplifiers in the switched-capacitor and continuous-time filters. It requires a .1F bypass to GND at the pin. No load current should be taken from the MID pin.
Power Supplies and Ground
A single low-impedance 5V supply is all that is required to achieve specified performance. A 5V supply plane is recommended if possible. VA and VD can be directly connected to 5V, and REF+ should be isolated with a 220-ohm resistor to 5V. A single low impedance ground plane can be used for all GND connections, simplifying PCB layout. Each supply pin should be bypassed to GND with a .1F ceramic cap positioned as close to the pin as possible.
DS1201-0702
Alesis Semiconductor 12555 Jefferson Blvd., Suite 285 Los Angeles, CA 90066 Phone (310) 301-0780 Fax (310) 306-1551 www.alesis-semi.com
-7-
+
Out 8Vpp GND
+ +
1 OUTLLEFT OUT
OUTPUT Conditioning
OUTR-
16
OUTPUT Conditioning
RIGHT OUT
2
OUTL+
OUTR+
15
3 GND +5V 4 220 0.1*
AGND
MID
14
0.1* GND +5V
REF+
VA
13 0.1*
5 REFGND 6 0.1* DIN GND FORMAT 8 FORMAT 7
DIN VD
AGND
12 GND
DGND
11 GND 10
DEM
DEM
WDCLK
9
WDCLKIN
24-bit DAC
Suggested Connections
* Position caps as close to pins as possible
DS1201-0702
Alesis Semiconductor 12555 Jefferson Blvd., Suite 285 Los Angeles, CA 90066 Phone (310) 301-0780 Fax (310) 306-1551 www.alesis-semi.com
-8-
NOTICE
Alesis Semiconductor reserves the right to make changes to their products or to discontinue any product or service without notice. All products are sold subject to terms and conditions of sale supplied at the time of order acknowledgement. Alesis Semiconductor assumes no responsibility for the use of any circuits described herein, conveys no license under any patent or other right, and makes no representation that the circuits are free of patent infringement. Information contained herein is only for illustration purposes and may vary depending upon a user's specific application. While the information in this publication has been carefully checked, no responsibility is assumed for inaccuracies. Alesis Semiconductor products are not designed for use in applications which involve potential risks of death, personal injury, or severe property or environmental damage or life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. All trademarks and registered trademarks are property of their respective owners.
Contact Information: Alesis Semiconductor 12555 Jefferson Blvd., Suite 285 Los Angeles, CA 90066 Phone: (310) 301-0780 Fax: (310) 306-1551 Email: sales@alesis-semi.com
Copyright 2002 Alesis Semiconductor Datasheet July 2002
Reproduction, in part or in whole, without the prior written consent of Alesis Semiconductor is prohibited.
DS1201-0702 Alesis Semiconductor 12555 Jefferson Blvd., Suite 285 Los Angeles, CA 90066 Phone (310) 301-0780 Fax (310) 306-1551 www.alesis-semi.com
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